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View csd16408q5 datasheet:

csd16408q5csd16408q5

CSD16408Q5www.ti.com SLPS228A OCTOBER 2009 REVISED SEPTEMBER 2010N-Channel NexFET Power MOSFET1FEATURESPRODUCT SUMMARY2 Ultralow Qg and QgdVDS Drain-to-source voltage 25 V Low Thermal ResistanceQg Gate charge, total (4.5 V) 6.7 nC Avalanche RatedQgd Gate charge, gate-to-drain 1.9 nC SON 5-mm 6-mm Plastic PackageVGS = 4.5 V 5.4 mrDS(on) Drain-to-source on-resistanceVGS = 10 V 3.6 mAPPLICATIONSVGS(th) Threshold voltage 1.8 V Point-of-Load Synchronous Buck inNetworking, Telecom and Computing SystemsORDERING INFORMATION Optimized for Control FET ApplicationsDevice Package Media Qty ShipSON 5-mm 6-mm 13-inch Tape andCSD16408Q5 plastic package (33-cm) 2500 reelDESCRIPTIONreelThe NexFET power MOSFET has been designedto minimize losses in power conversion applications.ABSOLUTE MAXIMUM RATING

 

Keywords - ALL TRANSISTORS DATASHEET

 csd16408q5.pdf Design, MOSFET, Power

 csd16408q5.pdf RoHS Compliant, Service, Triacs, Semiconductor

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