View csd16409q3 datasheet:

N-Channel CICLON NexFET Power MOSFETs CSD16409Q3 Features Product Summary Ultra Low Qg & Qgd VDS 25 VS 1 8 DS 1 8 D Qg 4.0 nC Low Thermal Resistance G DS 2 7 DS 2 7 D Qgd 1.0 nCS D Avalanche Rated DS S 3 6 D VGS=4.5V 9.5 m S 3 6 DD RDS(on) S DDG 4 5 DG 4 5 DVGS=10V 6.2 m Pb Free Terminal Plating Vth 2.0 V RoHS Compliant Halogen Free QFN 3.3mm x 3.3mm Plastic Package Top View Maximum Values (TA=25oC unless otherwise stated) Symbol Parameter Value UnitsVDS Drain to Source Voltage 25 VVGS Gate to Source Voltage +16 / -12 V Continuous Drain Current, TC = 25C A 60 ID Continuous Drain Current1 15 AIDM Pulsed Drain Current, TA = 25C2 90 APower Dissipation1 PD 2.6 WOperating Junction and Storage Temperature Range TJ, TSTG -55 to 150 C Avalanche Energy, single pulse ID =38A,

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