View csd16411q3 datasheet:

N-Channel CICLON NexFET Power MOSFETs CSD16411Q3 Product Summary Features Ultra Low Qg & Qgd VDS 25 VS 1 8 DS 1 8 D Qg 2.9 nC Low Thermal Resistance G DS 2 7 DS 2 7 D Qgd 0.7 nCS D Avalanche Rated DS S 3 6 D VGS=4.5V 12 m S 3 6 DD RDS(on) S DDG 4 5 DG 4 5 DVGS=10V 8 m Pb Free Terminal Plating Vth 2.0 V RoHS Compliant Halogen Free QFN 3.3mm x 3.3mm Plastic Package Top View Maximum Values (TA = 25oC unless otherwise stated) Symbol Parameter Value Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage +16 / -12 V GSContinuous Drain Current, T = 25C A C 56 I D Continuous Drain Current1 14 A I Pulsed Drain Current, T = 25C2 138 A DM A Power Dissipation1 P 2.7 W DOperating Junction and Storage Temperature Range T , T -55 to 150 C J STGAvalanch

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 csd16411q3.pdf Design, MOSFET, Power

 csd16411q3.pdf RoHS Compliant, Service, Triacs, Semiconductor

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