All Transistors. Datasheet

 

View ctb06n005 ctp06n005 datasheet:

ctb06n005_ctp06n005ctb06n005_ctp06n005

nvertCTB06N005,CTP06N005Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTB06N005 TO-263 CTB06N005CTP06N005 TO-220 CTP06N005Absolute Maximum Ratings at Tj= 25C unless otherwise notedParameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 68 VContinuous Drain Current TC = 25 135 ACIDContinuous Drain Current TC = 100 94 ACIDM 540 APulsed Drain Current (note1)Gate Source Voltage VGSS 20 VSingle Pulse Avalanche Energy (note2) EAS 290 mJAvalanche Current IAS 44 APower Dissipation TC = 25 (note3) 160 WCPDPower Dissipation TC = 100 (note3) 80 WCOpera

 

Keywords - ALL TRANSISTORS DATASHEET

 ctb06n005 ctp06n005.pdf Design, MOSFET, Power

 ctb06n005 ctp06n005.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ctb06n005 ctp06n005.pdf Database, Innovation, IC, Electricity

 

 
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