All Transistors. Datasheet

 

View ctp06n6p8 datasheet:

ctp06n6p8ctp06n6p8

nvertCTP06N6P8Suzhou Convert Semiconductor Co ., Ltd.68V N-Channel Trench MOSFETFEATURES Trench Power MOSFET Technology Low RDS(ON) Low Gate Charge Optimized For Fast-switching ApplicationsAPPLICATIONS DC/DC Converters Synchronous RectificationDevice Marking and Package InformationDevice Package MarkingCTP06N6P8 TO-220 CTP06N6P8Absolute Maximum Ratings at Tj= 25C unless otherwise notedParameter Symbol Value UnitDrain-Source Voltage (VGS = 0V) VDSS 68 VContinuous Drain Current TC = 25 (note2) 115 ACIDContinuous Drain Current TC = 100 (note2) 85 ACIDM 460 APulsed Drain Current (note1)Gate Source Voltage VGSS 20 VSingle Pulse Avalanche Energy (note1) EAS 487 mJAvalanche Current IAS 57 APower Dissipation TC = 25 (note3) 158 WCPDPower Dissipation TC = 100 (note3) 79 WCOperating Junction and Stor

 

Keywords - ALL TRANSISTORS DATASHEET

 ctp06n6p8.pdf Design, MOSFET, Power

 ctp06n6p8.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ctp06n6p8.pdf Database, Innovation, IC, Electricity

 

 
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