All Transistors. Datasheet

 

View d55nf06 f55nf06 p55nf06 u55nf06 datasheet:

d55nf06_f55nf06_p55nf06_u55nf06d55nf06_f55nf06_p55nf06_u55nf06

55NF06Pb55NF06Pb Free Plating ProductN-CHANNEL POWER MOSFET TRANSISTOR50 AMPERE 60 VOLTN-CHANNEL POWER MOSFET12TO-251/IPAK3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12threshold voltages of 4 volt. TO-220/TO-220F3It is mainly suitable electronic ballast, and low power switching mode power appliances. FEATURES * RDS(ON) = 23m @VGS = 10 V 123* Ultra low gate charge ( typical 30 nC ) TO-252/DPAK* Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability 2.Drain APPLICATION SYMBOL Auotmobile Convert SystemU55NF06 TO-251/IPAKP55NF06 TO-220Networking DC-DC Power Sy

 

Keywords - ALL TRANSISTORS DATASHEET

 d55nf06 f55nf06 p55nf06 u55nf06.pdf Design, MOSFET, Power

 d55nf06 f55nf06 p55nf06 u55nf06.pdf RoHS Compliant, Service, Triacs, Semiconductor

 d55nf06 f55nf06 p55nf06 u55nf06.pdf Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.