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View d882 sot-89 datasheet:

d882_sot-89d882_sot-89

D882 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.631.81.41.42.64.252.43.75Features 0.8 MIN Power dissipation 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 3 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 VEmitter-base break

 

Keywords - ALL TRANSISTORS DATASHEET

 d882 sot-89.pdf Design, MOSFET, Power

 d882 sot-89.pdf RoHS Compliant, Service, Triacs, Semiconductor

 d882 sot-89.pdf Database, Innovation, IC, Electricity

 

 
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