View d882 to-252-2l datasheet:

D882 Transistor(NPN)1. BASE TO-252-2L2. COLLECTOR 3 .EMITTER Features Power dissipation Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 3 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC = 100A, IE=0 40 VCollector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 VEmitter-base breakdown voltage V(BR)EBO IE= 100A, IC=0 5 VCollector cut-off current ICBO VCB= 40 V, IE=0 1 ACollector cut-off current ICEO VCE= 30 V,

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