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dgw40n120cth0dgw40n120cth0

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Including fast & soft recovery anti-parallel FWD Maximum Ratings Parameter Symbol Value Unit V 1200 V CECollector-Emitter Breakdown Voltage DC Collector Current, limited by T jmax80 A T = 25C CIC 40 T = 100C CDiode Forward Current, limited by T jmax80 A T = 25C C IF 40 T = 100C CVGE 20 V Continuous Gate-Emitter Voltage VGE 30 V Transient Gate-Emitter Voltage Turn off Safe Operating Area V 1

 

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 dgw40n120cth0.pdf Design, MOSFET, Power

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