View dgw40n65bth datasheet:

RoHS DGW40N65BTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temperature stable High short circuit capability(5us) Maximum Ratings Parameter Symbol Value Unit V 650 V CECollector-Emitter Breakdown Voltage DC Collector Current, limited by T jmaxT = 25C 80 CI A C 40 T = 100C CDiode Forward Current, limited by T jmaxT = 25C C 60 I A F 30 T = 100C CVGE 20 V Continuous Gate-Emitter Voltage VGE 30 V Transient Gate-Emitter Voltage Turn off Safe Operating Area V 1200V, CE

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