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View dgw40n65cth datasheet:

dgw40n65cthdgw40n65cth

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temperature stable High short circuit capability(5us) Maximum Ratings Parameter Symbol Value Unit V 650 V CECollector-Emitter Breakdown Voltage DC Collector Current, limited by T jmaxT = 25C 80 CI A C 40 T = 100C CDiode Forward Current, limited by T jmaxT = 25C C 80 I A F 40 T = 100C CVGE 20 V Continuous Gate-Emitter Voltage VGE 30 V Transient Gate-Emitter Voltage Turn off Safe Operating Area V 1200V, CE

 

Keywords - ALL TRANSISTORS DATASHEET

 dgw40n65cth.pdf Design, MOSFET, Power

 dgw40n65cth.pdf RoHS Compliant, Service, Triacs, Semiconductor

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