View dh100n06 datasheet:

DH100N06112A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.5mDS(on) (TYP)standard.13 SI = 112AD2 Features Low on resistance Low gate charge Fast switching Low reverse transfer capacitances 100% single pulse avalanche energy test 100% V testDS3 Applications Power switching applications DC-DC converters Full bridge controlTO-220C4 Electrical Characteristics4.1 Absolute Maximum Ratings (Tc=25,unless otherwise noted)Parameter Symbol Rating UnitsDrian-to-Source Voltage V 68 VDSSGate-to-Source Voltage V 20 VGSST =25 112 ACContinuous Drain Current IDT =100 81 ACPulsed Drain Current

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