View fcp11n60n fcpf11n60nt datasheet:

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise Low Effective Output Capacitanceprocess control, SupreMOS provides world class Rsp, superior 100% Avalanche Testedswitching performance and ruggedness. This SupreMOS MOSFET fits the industrys AC-DC SMPS RoHS Compliantrequirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.DGTO-220TO-220F G D SFCP SeriesG D S FCPF SeriesSMOSFET Max

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 fcp11n60n fcpf11n60nt.pdf Design, MOSFET, Power

 fcp11n60n fcpf11n60nt.pdf RoHS Compliant, Service, Triacs, Semiconductor

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