View fdd2570 datasheet:

February 2001FDD2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.7 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 90 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. Low gate chargeThese MOSFETs feature faster switching and lowergate charge than other MOSFETs with comparable Fast switching speedRDS(ON) specifications. High performance trench technology for extremelyThe result is a MOSFET that is easy and safer to drivelow RDS(ON)(even at very high frequencies), and DC/DC powersupply designs with higher overall efficiency. High power and current handling capability.DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise notedSymbol

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