View fdd2612 datasheet:

August 2001FDD2612200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional High performance trench technology for extremelyswitching PWM controllers. It has been optimized forlow RDS(ON)low gate charge, low RDS(ON) and fast switching speed. High power and current handling capabilityApplications Fast switching speed DC/DC converter Low gate charge (8nC typical)DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain-Source Voltage 200 VVGSS Gate-Source Voltage V 20ID Drain Current Continuous (Note 1a) 4.9 A Pulsed 10PD Power Dissipation (

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