View fdd2670 datasheet:

November 2001FDD2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 3.6 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate chargeswitching PWM controllers. Fast switching speedThese MOSFETs feature faster switching and lowergate charge than other MOSFETs with comparableRDS(ON) specifications. High performance trench technology for extremelylow RDS(ON)The result is a MOSFET that is easy and safer to drive(even at very high frequencies), and DC/DC power High power and current handling capabilitysupply designs with higher overall efficiency.DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings UnitsVDSS Dr

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