View fdd5612 datasheet:

March 2001 FDD5612 60V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designedFeatures specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional 18 A, 60 V. RDS(ON) = 55 m @ VGS = 10 V switching PWM controllers. RDS(ON) = 64 m @ VGS = 6 V These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable Optimized for use in high frequency DC/DC RDS(ON) specifications. The result is a MOSFET that is converters. easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall Low gade charge. efficiency. Very fast switching. DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain-Sourc

Keywords - ALL TRANSISTORS DATASHEET

 fdd5612.pdf Design, MOSFET, Power

 fdd5612.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd5612.pdf Database, Innovation, IC, Electricity