View fdd5670 datasheet:

December 2009FDD567060V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 52 A, 60 V RDS(ON) = 15 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 18 m @ VGS = 6 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate chargelow gate charge, low RDS( ON) and fast switching speed.extremely low RDS(ON) in a small package. Fast switchingApplications High performance trench technology for extremely DC/DC converterlow RDS(ON) Motor drivesDDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain-Source Voltage 60 VVGSS Gate-Source Voltage 20 VID Drain Current Continuous (Note 3) 52 A Pulsed (Note 1a)

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