View fdd5690 datasheet:

December 2002FDD569060V N-Channel PowerTrench MOSFET General Description FeaturesThis N-Channel MOSFET has been designed specifically 30 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 Vto improve the overall efficiency of DC/DC converters using RDS(ON) = 0.032 @ VGS = 6 V.either synchronous or conventional switching PWMcontrollers. Low gate charge (23nC typical).These MOSFETs feature faster switching and lower gate Fast switching speed.charge than other MOSFETs with comparable RDS(ON) High performance trench technology for extremelyspecifications.low RDS(ON).The result is a MOSFET that is easy and safer to drive(even at very high frequencies), and DC/DC power supplydesigns with higher overall efficiency.DDGGSSTO-252Absolute Maximum Ratings TC=25oC unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain-Source V

Keywords - ALL TRANSISTORS DATASHEET

 fdd5690.pdf Design, MOSFET, Power

 fdd5690.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd5690.pdf Database, Innovation, IC, Electricity