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fdd5n50ufdd5n50u

December 2007TMUltra FRFETFDD5N50UtmN-Channel MOSFET, FRFET 500V, 3A, 2.0Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 11nC)DOMS technology. Low Crss ( Typ. 5pF)This advance technology has been especially tailored to mini-mize on-state resistance, provide superior switching perfor- Fast switchingmance, and withstand high energy pulse in the avalanche and 100% avalanche testedcommutationmode. These devices are well suited for high effi-cient switched mode power supplies and active power factor cor- Improved dv/dt capabilityrection. RoHS compliantDDGGS D-PAKSMOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter

 

Keywords - ALL TRANSISTORS DATASHEET

 fdd5n50u.pdf Design, MOSFET, Power

 fdd5n50u.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdd5n50u.pdf Database, Innovation, IC, Electricity

 

 
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