View fdd6530a datasheet:

July 2001FDD6530A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 47 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge (6.5 nC typical)low gate charge, low RDS( ON) and fast switching speed. Fast switchingApplications High performance trench technology for extremely DC/DC converterlow RDS(ON) Motor drives.DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise notedSymbol Parameter Ratings UnitsVDSS Drain-Source Voltage 20 VVGSS Gate-Source Voltage 8 VID Drain Current Continuous (Note 3) 21 A Pulsed (Note 1a) 100PD Power Dissipation (Note

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