View fdd6630a datasheet:

April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V R = 35 m @ V = 10 V DS(ON) GSspecifically to improve the overall efficiency of DC/DC R = 50 m @ V = 4.5 V DS(ON) GSconverters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge (5nC typical) low gate charge, low RDS( ON) and fast switching speed. Fast switching Applications High performance trench technology for extremely DC/DC converter low R DS(ON) Motor drives .DDGGSTO-252SAbsolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSSV Gate-Source Voltage 20 V GSSI Drain Current Continuous (Note 3) 21 A D Pulsed (Note 1a) 100

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