View fdd6632 datasheet:

October 2004FDD6632N-Channel Logic Level UltraFET Trench Power MOSFET30V, 9A, 70mGeneral Description FeaturesThis device employs a new advanced trench MOSFET Fast switchingtechnology and features low gate charge while maintaining rDS(ON) = 0.058 (Typ), VGS = 10V, ID = 9Alow on-resistance. rDS(ON) = 0.090 (Typ), VGS = 4.5V, ID = 6AOptimized for switching applications, this device improvesthe overall efficiency of DC/DC converters and allows Qg(TOT) (Typ) = 2.6nC, VGS = 5Voperation to higher switching frequencies. Qgd (Typ) = 0.8nCFormerly developmental type 83317 CISS (Typ) = 255pFApplications DC/DC convertersDDGGSD-PAKSTO-252(TO-252)MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain to Source Voltage 30 VVGS Gate to Source Voltage 20 VDrain

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