View fdd6635 datasheet:

February 2007tmFDD6635 35V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench 59 A, 35 V RDS(ON) = 10 m @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 m @ VGS = 4.5 V capability to offer superior performance benefit in the Fast Switching applications. RoHS compliant Applications Inverter Power Supplies DDGGSD-PAKTO-252(TO-252)SAbsolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings UnitsVDSS Drain-Source Voltage 35 VVDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 VVGSS Gate-Source Voltage 20 V ID Continuous Drain Current @TC=25C (Note 3) 59 A@TA=25C (Note 1a) 15Pulsed (Note 1a) 100EAS Single Pulse Avalanc

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