View fdd6637 datasheet:

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using 55 A, 35 V RDS(ON) = 11.6 m @ VGS = 10 V Fairchild Semiconductors proprietary PowerTrench RDS(ON) = 18 m @ VGS = 4.5 V technology to deliver low Rdson and optimized Bvdss High performance trench technology for extremely capability to offer superior performance benefit in the low RDS(ON) applications. RoHS Compliant Applications Inverter Power Supplies DDGG SD-PAKTO-252S(TO-252)Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V VGSS Gate-Source Voltage V 25 ID A Continuous Drain Current @TC=25C (Note 3) 55 @T

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