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November 2013FDD6N50 / FDU6N50N-Channel UniFETTM MOSFET500 V, 6 A, 900 mFeatures Description RDS(on) = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 12.8 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 9 pF)provide better switching performance and higher avalancheenergy strength. This device family is suitable for switching 100% Avalanche Testedpower converter applications such as power factor correction Improved dv/dt Capability(PFC), flat panel display (FPD) TV power, ATX and electroniclamp ballasts.Applications LCD/LED/PDP TV Lighting Uninterruptible Power Supply AC-DC Power SupplyDDGS I-PAKD-PAKGGDSSAbsolute Maximum Ratings TC =

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