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fdd6n50tm_f085fdd6n50tm_f085

November 2010FDD6N50TM_F085500V N-Channel MOSFETFeatures Description 6A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the avalanche Improved dv/dt capabilityand commutation mode. These devices are well suited for high Qualified to AEC Q101efficient switched mode power supplies and active power factor RoHS Compliantcorrection.DDGG S D-PAKSAbsolute Maximum RatingsSymbol Parameter Ratings UnitVDSS Drain-Source Voltage 500 V

 

Keywords - ALL TRANSISTORS DATASHEET

 fdd6n50tm f085.pdf Design, MOSFET, Power

 fdd6n50tm f085.pdf RoHS Compliant, Service, Triacs, Semiconductor

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