View fdma908pz datasheet:

February 2014FDMA908PZSingle P-Channel PowerTrench MOSFET-12 V, -12 A, 12.5 mFeatures Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 AGeneral Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V, ID = -8 AIt features a MOSFET with low on-state resistance and zener diode protection against ESD. The MicroFET 2X2 package Low Profile - 0.8 mm maximum in the new package MicroFET offers exceptional thermal performance for its physical size and 2x2 mmis well suited to linear mode applications. HBM ESD protection level > 2.8 kV typical (Note 3) Free from halogenated compounds and antimony oxides RoHS Compliant Pin 1GD DBottom Drain ContactDDDrainSourceD DG

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