View fdmc4435bz datasheet:

September 2010FDMC4435BZP-Channel Power Trench MOSFET -30 V, -18 A, 20 m Features General Description Max rDS(on) = 20 m at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 37 m at VGS = -4.5 V, ID = -6.3 Abeen especially tailored to minimize the on-state resistance. This Extended VGSS range (-25 V) for battery applications device is well suited for Power Management and load High performance trench technology for extremely low rDS(on) switching applications common in Notebook Computers and Portable Battery Packs. High power and current handling capabilityApplications HBM ESD protection level >7 kV typical (Note 4) High side in DC - DC Buck Converters 100% UIL Tested Notebook battery power management Termination is Lead-free and RoHS Compliant

Keywords - ALL TRANSISTORS DATASHEET

 fdmc4435bz.pdf Design, MOSFET, Power

 fdmc4435bz.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc4435bz.pdf Database, Innovation, IC, Electricity