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fdmc7200sfdmc7200s

June 2014FDMC7200SDual N-Channel PowerTrench MOSFETs 30 V, 22 m, 10 m Features General DescriptionThis device includes two specialized N-Channel MOSFETs in a Q1: N-Channeldual power33 (3mm X 3mm MLP) package. The switch node has Max rDS(on) = 22 m at VGS = 10 V, ID = 6 Abeen internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and Max rDS(on) = 34 m at VGS = 4.5 V, ID = 5 Asynchronous MOSFET (Q2) have been designed to provide optimal power efficiency.Q2: N-Channel Max rDS(on) = 10 m at VGS = 10 V, ID = 8.5 AApplications Max rDS(on) = 13.5 m at VGS = 4.5 V, ID = 7.2 A Mobile Computing RoHS Compliant Mobile Internet Devices General Purpose Point of LoadBottomBottomVIND1VIN Q2 D15 4Pin 1VIND1GHSG1VIND16 37 2GNDS2GNDS2GND8 1S2

 

Keywords - ALL TRANSISTORS DATASHEET

 fdmc7200s.pdf Design, MOSFET, Power

 fdmc7200s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc7200s.pdf Database, Innovation, IC, Electricity

 

 
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