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fdmc8321lfdmc8321l

February 2013FDMC8321LN-Channel Power Trench MOSFET 40 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 18 Aringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low rDS(on) convertional switching PWM contollers. It has been optimized for and hign efficiencylow gate charge, low rDS(on), fast switching speed body diode reverse recovery performance. Next Generation enhanced body diode technology,engineered for soft recoveryApplications 100% UIL tested Synchronous rectifier RoHS Compliant Load switch/Orring Motor switchBottomTopPin 1SSDSSGSDSDDDDGDDPower 33MO

 

Keywords - ALL TRANSISTORS DATASHEET

 fdmc8321l.pdf Design, MOSFET, Power

 fdmc8321l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc8321l.pdf Database, Innovation, IC, Electricity

 

 
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