View fdmc8321ldc datasheet:

December 2014FDMC8321LDCN-Channel Power Trench MOSFET40 V, 108 A, 2.5 mFeatures General Description Dual CoolTM Top Side Cooling PQFN packageThis N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 2.5 m at VGS = 10 V, ID = 27 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 4.1 m at VGS = 4.5 V, ID = 21 Atechnologies have been combined to offer the lowest rDS(on)while maintaining excellent switching performance by extremely High performance technology for extremely low rDS(on)low Junction-to-Ambient thermal resistance. RoHS CompliantApplications Primary DC-DC Switch Motor Bridge Switch Synchronous RectifierPin 1 GSSS DSDSDD SDDDDGTop BottomPower 33MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Rating

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