View fdmc8327l datasheet:

October 2013FDMC8327LN-Channel PowerTrench MOSFET 40 V, 14 A, 9.7 m Features General Description Max rDS(on) = 9.7 m at VGS = 10 V, ID = 12 AThis N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process that has Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 10 Abeen especially tailored to minimize the on-state resistance and Low Profile - 0.8mm max in Power 33yet maintain superior switching performance. 100% UIL testApplication RoHS Compliant DC-DC ConversionBottomTopSDD D D D8 7 6 5SDSDGDG S S S1 2 3 4MLP 3.3x3.3MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Ratings UnitsVDS Drain to Source Voltage 40 VVGS Gate to Source Voltage 20 VDrain Current - Continuous (Package limited) TC = 25 C 14- Continuous (Silicon limited) TC = 25 C 43ID

Keywords - ALL TRANSISTORS DATASHEET

 fdmc8327l.pdf Design, MOSFET, Power

 fdmc8327l.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdmc8327l.pdf Database, Innovation, IC, Electricity