View fdms3600as datasheet:

April 2011FDMS3600ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.5 m at VGS = 4.5 V, ID = 14 Abuck converters. The control MOSFET (Q1) and synchronousQ2: N-ChannelSyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 1.6 m at VGS = 10 V, ID = 30 Aefficiency. Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 AApplications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communicationsinductance and reduced switch node ringing

Keywords - ALL TRANSISTORS DATASHEET

 fdms3600as.pdf Design, MOSFET, Power

 fdms3600as.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdms3600as.pdf Database, Innovation, IC, Electricity