View fdms3600s datasheet:

October 2010FDMS3600SDual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 m N-Channel: 25 V, 40 A, 1.6 mFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5 V, ID = 14 Abuck converters. The control MOSFET (Q1) and synchronousQ2: N-ChannelSyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 1.6 m at VGS = 10 V, ID = 30 Aefficiency. Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 AApplications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communicationsind

Keywords - ALL TRANSISTORS DATASHEET

 fdms3600s.pdf Design, MOSFET, Power

 fdms3600s.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fdms3600s.pdf Database, Innovation, IC, Electricity