View fdms3602s datasheet:

March 2011FDMS3602SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 5.6 m at VGS = 10 V, ID = 15 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 8.1 m at VGS = 4.5 V, ID = 14 Abuck converters. The control MOSFET (Q1) and synchronousQ2: N-ChannelSyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 2.2 m at VGS = 10 V, ID = 26 Aefficiency. Max rDS(on) = 3.4 m at VGS = 4.5 V, ID = 22 AApplications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communicationsinductance and reduced switch node ringing

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