View fdms3606as datasheet:

April 2011FDMS3606ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V, ID = 11 Abuck converters. The control MOSFET (Q1) and synchronousQ2: N-ChannelSyncFET (Q2) have been designed to provide optimal power Max rDS(on) = 1.9 m at VGS = 10 V, ID = 27 Aefficiency. Max rDS(on) = 2.8 m at VGS = 4.5 V, ID = 23 AApplications Low inductance packaging shortens rise/fall times, resulting in lower switching losses Computing MOSFET integration enables optimum layout for lower circuit Communicationsinductance and reduced switch node ringing Ge

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