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November 2013FDP10N60NZ / FDPF10N60NZN-Channel UniFETTM II MOSFET600 V, 10 A, 750 mFeatures Description RDS(on) = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 23 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 10 pF)on-state resistance among the planar MOSFET, and also pro- 100% Avalanche Testedvides superior switching performance and higher avalancheenergy strength. In addition, internal gate-source ESD diode Improved dv/dt Capabilityallows UniFET II MOSFET to withstand over 2kV HBM surge ESD Improved Capabilitystress. This device family is suitable for switching power con- RoHS Compliantverter applications such as power factor correction (PFC), flatpanel display (F

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 fdp10n60nz fdpf10n60nz.pdf Design, MOSFET, Power

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