View fdp10n60zu fdpf10n60zut datasheet:

April 2009TM UniFETFDP10N60ZU / FDPF10N60ZUTtmN-Channel MOSFET, FRFET 600V, 9A, 0.8Features Description RDS(on) = 0.65 ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 31nC)stripe, DMOS technology. Low Crss ( Typ. 15pF)This advance technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switchingperformance, and withstand high energy pulse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor Improved dv/dt capabilitycorrection. RoHS compliantDDGGTO-220FTO-220 G D SG D SFDPF SeriesFDP SeriesSSMOSFET Maximum Ratings

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