View fgl60n100bntd datasheet:

IGBTFGL60N100BNTDNPT-Trench IGBTGeneral Description FeaturesTrench insulated gate bipolar transistors (IGBTs) with NPT High Speed Switchingtechnology show outstanding performance in conduction Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60Aand switching characteristics as well as enhanced High Input Impedanceavalanche ruggedness. These devices are well suited for Built-in Fast Recovery DiodeInduction Heating ( I-H ) applicationsApplicationMicro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance CCGGTO-264EEG C EAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Description FGL60N100BNTD UnitsVCES Collector-Emitter Voltage 1000 VVGES Gate-Emitter Voltage 25 VCollector Current @ TC = 25C60 AICCollector Current @ TC = 100C42 AICM (1) Pulsed Collector Current 200 AIF Diode Cont

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