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fgy75n60smdfgy75n60smd

June 2014FGY75N60SMD600 V, 75 A Field Stop IGBTFeatures General Description High Current Capability Using novel field stop IGBT technology, Fairchilds new series of field stop 2nd generation IGBTs offer the optimum perfor- Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 Amance for solar inverter, UPS, welder and PFC applications High Input Impedancewhere low conduction and switching losses are essential. Fast Switching : EOFF = 10 uJ/A RoHS CompliantApplication Solar Inverter, UPS, Welder, SMPS, PFCCGGEPower TO247C(TO-247D03)EAbsolute Maximum RatingsSymbol Description Ratings UnitVCES Collector to Emitter Voltage 600 VGate to Emitter Voltage 20 VVGESTransient Gate to Emitter Voltage 30 VCollector Current @ TC = 25oC 150 AICCollector Current @ TC = 100oC 75 AICM (1) Pulsed Collector Current 225

 

Keywords - ALL TRANSISTORS DATASHEET

 fgy75n60smd.pdf Design, MOSFET, Power

 fgy75n60smd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fgy75n60smd.pdf Database, Innovation, IC, Electricity

 

 
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