View fgy75t95lqdt datasheet:

IGBT - Field Stop, Trench75 A, 950 VProduct PreviewFGY75T95LQDTTrench Field Stop 4th generation Low Vcesat IGBT co-packagedwith full current rated diode.www.onsemi.comFeatures Maximum Junction Temperature : TJ = 17575 A, 950 V Positive Temperature Co-efficient for Easy Parallel OperatingVCESat = 1.31 V (Typ.) High Current CapabilityC Low Saturation Voltage: VCE(Sat) = 1.31 V (Typ.) @ IC = 75 A Fast Switching Tighten Parameter Distribution These Devices are Pb-Free and are RoHS CompliantGApplicationsE Solar InverterMAXIMUM RATINGSRating Symbol Value UnitCollector to Emitter Voltage VCES 950 VGate to Emitter Voltage VGES 20 V30GTransient Gate to Emitter Voltage TO-247-3LDCCASE 340CDE150IC ACollector Current @TC = 25C75@TC = 100CMARKING DIAGRAMILM 225 APulsed Collector Current

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