View fir10n60fg datasheet:

FIR10N60FGSilicon N-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 10 APD (TC=25) 125 WRDS(ON) 0.63 Features G D S Fast Switching ESD Improved Capability D Low Gate Charge (Typical Data:60nC) Low Reverse transfer capacitances(Typical:28pF) G 100% Single Pulse avalanche energy Test S ApplicationsMarking DiagramPower switch circuit of adaptor and charger. Y = YearA = Assembly LocationYAWWWW = Work WeekFIR10N60FFIR10N60F = Specific Device CodeAbsoluteTc= 25 unless otherwise specified Symbol Parameter Rating UnitsDrain-to-Source Voltage VDSS 600 V Continuous Drain Current 10 A ID Continuous Drain Current TC = 100 C 6.4 A a140 A IDM Pulsed Drain Current Gate-to-Source Voltage VGS 20 V a2300 mJ EAS Single Pulse Avalanche Energy a130 mJ EAR Avalanche Energy ,Repetitiv

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