View fmc10n60e datasheet:

FMC10N60E FUJI POWER MOSFETSuper FAP-E3 series N-CHANNEL SILICON POWER MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicMaintains both low power loss and low noiseT-Pack(S)Lower R (on) characteristicDSMore controllable switching dv/dt by gate resistanceDrain(D)Smaller V ringing waveform during switchingGSNarrow band of the gate threshold voltage (3.00.5V)High avalanche durabilityGate(G)ApplicationsSource(S)Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25C (unless otherwise specified)Description Symbol Characteristics Unit RemarksVDS 600 VDrain-Source VoltageVDSX 600 V VGS = -30VContinuous Drain Current ID 10 APulsed Drain Current IDP 40 AGate-Source Voltage VGS 30 VRepetitive and Non-Repetitive Maximum AvalancheCur

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