View fqa18n50v2 datasheet:

TMQFETFQA18N50V2500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.265 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 42 nC)planar stripe, DMOS technology. Low Crss ( typical 11 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficient switched mode power supplies,active power factor correction, electronic lamp ballastbased on half bridge topology.DG TO-3PSG D S FQA SeriesAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQ

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