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View fqb7n10ltm fqi7n10ltu datasheet:

fqb7n10ltm_fqi7n10ltufqb7n10ltm_fqi7n10ltu

December 2000TMQFETQFETQFETQFETFQB7N10L / FQI7N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 7.3A, 100V, RDS(on) = 0.35 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 4.6 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology is especially tailored to minimize Fast switchingon-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are 175C maximum junction temperature ratingwell suited for low voltage applications such as high Low level gate drive requirments allowingefficiency switching DC/DC converters, and DC motordirect operationfr

 

Keywords - ALL TRANSISTORS DATASHEET

 fqb7n10ltm fqi7n10ltu.pdf Design, MOSFET, Power

 fqb7n10ltm fqi7n10ltu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb7n10ltm fqi7n10ltu.pdf Database, Innovation, IC, Electricity

 

 
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