View fqb7n20ltm datasheet:

December 2000TMQFETQFETQFETQFETFQB7N20L / FQI7N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.5A, 200V, RDS(on) = 0.75 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.8 nC)planar stripe, DMOS technology. Low Crss ( typical 8.5 pF)This advanced technology is especially tailored to minimize Fast switchingon-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation modes. These devices are Low level gate drive requirement allowing directwell suited for high efficiency switching DC/DC converters,operation from logic driversswitch mode power supplies, and motor control.D DG GS D2-PAK I2-P

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