View fqb7n30tm datasheet:

April 2000TMQFETQFETQFETQFETFQB7N30 / FQI7N30300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 7A, 300V, RDS(on) = 0.7 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters,switch mode power supply.DDG GS D -PAK I -PAKGD SFQB Series FQI SeriesSAbsoIute Maximum Ratings T = 25C unless otherwise notedSymboI Pa

Keywords - ALL TRANSISTORS DATASHEET

 fqb7n30tm.pdf Design, MOSFET, Power

 fqb7n30tm.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqb7n30tm.pdf Database, Innovation, IC, Electricity