View fqb7n65ctm datasheet:

October 2008QFETFQB7N65C650V N-Channel MOSFETFeatures Description 7A, 650V, RDS(on) = 1.4 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 28 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 12 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the avalanche Improved dv/dt capabilityand commutation mode. These devices are well suited for high RoHS Compliant efficient switched mode power supplies, active power factorcorrection, electronic lamp ballast based on half bridgetopology.DDGG SD2-PAKFQB SeriesSAbsolute Maximum RatingsSymbol Parameter FQB7N65C Units

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 fqb7n65ctm.pdf Design, MOSFET, Power

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