View fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu datasheet:

April 2000TMQFETQFETQFETQFETFQD7P20 / FQU7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switching DC/DC converters.D S G D-PAK I-PAK GSFQD Series G FQU Seri

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